? 2004 ixys all rights reserved 1 - 4 439 ixdr 30n120 d1 ixdr 30n120 ixys reserves the right to change limits, test conditions and dimensions features ? npt igbt technology - high switching speed - low switching losses - square rbsoa, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - mos input, voltage controlled - fast recovery epitaxial diode epoxy meets ul 94v-0 isolated and ul registered e153432 advantages dcb isolated mounting tab meets to-247ad package outline package for clip or spring mounting space savings high power density typical applications ac motor speed control dc servo and robot drives dc choppers uninteruptible power supplies (ups) switch-mode and resonant-mode power supplies high voltage igbt with optional diode isoplus tm package (electrically isolated back side) short circuit soa capability square rbsoa symbol conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c; r ge = 20 k ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 50 a i c90 t c = 90c 30 a i cm t c = 90c, t p = 1 ms 60 a rbsoa v ge = 15 v, t j = 125c, r g = 47 ? i cm = 50 a clamped inductive load, l = 30 mh v cek < v ces t sc v ge = 15 v, v ce = v ces , t j = 125c 10 s (scsoa) r g = 47 ? , non repetitive p c t c = 25c igbt 200 w diode 95 w t j -55 ... +150 c t stg -55 ... +150 c v isol 50/60 hz, rms i isol < 1 ma 2500 v~ weight 6g symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v (br)ces v ge = 0 v 1200 v v ge(th) i c = 1 ma, v ce = v ge 4.5 6.5 v i ces v ce = v ces ,t j = 25c 1.5 ma t j = 125c 2.5 ma i ges v ce = 0 v, v ge = 20 v 500 na v ce(sat) i c = 30 a, v ge = 15 v 2.4 2.9 v v ces = 1200 v i c25 = 50 a v ce(sat) typ = 2.4 v g = gate c = collector e = emitter isolated backside* isoplus 247 tm e153432 g c e g c e ixdr 30n120 ixdr 30n120 d1 e c g
? 2004 ixys all rights reserved 2 - 4 439 ixdr 30n120 d1 ixdr 30n120 ixys reserves the right to change limits, test conditions and dimensions symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. c ies 1650 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 250 pf c res 110 pf q g i c = 30 a, v ge = 15 v, v ce = 0.5 v ces 120 nc t d(on) 100 ns t r 70 ns t d(off) 500 ns t f 70 ns e on 4.6 mj e off 3.4 mj r thjc 0.6 k/w r thch package with heatsink compound 0.25 k/w inductive load, t j = 125c i c = 30 a, v ge = 15 v, v ce = 600 v, r g = 47 ? reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol conditions min. typ. max. v f i f = 30 a, v ge = 0 v 2.5 2.75 v i f = 30 a, v ge = 0 v, t j = 125c 2.0 v i f t c = 25c 50 a t c = 90c 27 a i rm i f = 30 a, -di f /dt = 400 a/s, v r = 600 v 20 a t rr v ge = 0 v, t j = 125c 200 ns t rr i f = 1 a, -di f /dt = 100 a/s, v r = 30 v, v ge = 0 v 40 ns r thjc 1.3 k/w isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 s 13.21 13.72 .520 .540 t 15.75 16.26 .620 .640 u 1.65 3.03 .065 .080 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection
? 2004 ixys all rights reserved 3 - 4 439 ixdr 30n120 d1 ixdr 30n120 ixys reserves the right to change limits, test conditions and dimensions 0 200 400 600 800 1000 0 20 40 60 0 100 200 300 01234 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 13v 11v t j = 25c v ge =17v t j = 125c v ce = 600v i c = 25a 15v 567891011 0 10 20 30 40 50 60 13v 11v v ge =17v 15v v ce = 20v t j = 25c 9v 9v v ce v a i c v ce a i c v v v v ge v f a i c a i f nc q g -di/dt v v ge a i rm t rr ns a/ s ixdh/..r30n120 t j = 125c v r = 600v i f = 30a t j = 25c t j = 125c i rm t rr fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode
? 2004 ixys all rights reserved 4 - 4 439 ixdr 30n120 d1 ixdr 30n120 ixys reserves the right to change limits, test conditions and dimensions 0 1020304050 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 0 1020304050 0 1 2 3 4 5 6 0 100 200 300 400 500 600 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0 40 80 120 160 200 240 0 1 2 3 4 5 0 300 600 900 1200 1500 0 40 80 120 160 200 240 0 2 4 6 8 10 12 0 60 120 180 240 single pulse v ce = 600v v ge = 15v r g = 47 ? t j = 125c ixdr30n120 v ce = 600v v ge = 15v i c = 25a t j = 125c 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 r g = 47 ? t j = 125c v cek < v ces v ce = 600v v ge = 15v r g = 47 ? t j = 125c e on v ce = 600v v ge = 15v i c = 25a t j = 125c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode v a mj ns ns mj fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and sw itching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse bi ased safe operating area fig. 12 typ. transient thermal impedance rbsoa
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